189
9152BINDCO02/10
ATA8743
28.8   High-voltage Serial Programming Algorithm
To program and verify the ATtiny24/44/84 in the High-voltage Serial Programming mode, the fol-
lowing sequence is recommended (See instruction formats in Table 28-15 on page 192):
28.8.1
Enter High-voltage Serial Programming Mode
The following algorithm puts the device in High-voltage Serial Programming mode:
1.  Apply 4.5 - 5.5V between V
CC
 and GND.
2.  Set RESET pin to 0 and toggle SCI at least six times.
3.  Set the Prog_enable pins listed in Table 28-13 on page 188 to 000 and wait at least 100
ns.
4.  Apply V
HVRST
 - 5.5V to RESET. Keep the Prog_enable pins unchanged for at least t
HVRST
 
after the High-voltage has been applied to ensure the Prog_enable signature has been
latched.
5.  Shortly after latching the Prog_enable signature, the device will actively output data on
the Prog_enable[2]/SDO pin, and the resulting drive contention may increase the power
consumption. To minimize this drive contention, release the Prog_enable[2] pin after
t
HVRST
 has elapsed.
6.  Wait at least 50 祍 before giving any serial instructions on SDI/SII.
28.8.2
Considerations for Efficient Programming
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
" The command needs only be loaded once when writing or reading multiple memory locations.
" Skip writing the data value 0xFF that is the contents of the entire EEPROM (unless the
EESAVE Fuse is programmed) and Flash after a Chip Erase.
" Address High byte needs only be loaded before programming or reading a new 256 word
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
28.8.3
Chip Erase
The Chip Erase will erase the Flash and EEPROM
(1)
 memories plus Lock bits. The Lock bits are
not reset until the Program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
re-programmed.
Note:
1.  The EEPROM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
1.  Load command Chip Erase (see Table 28-15 on page 192).
2.  Wait after Instr. 3 until SDO goes high for the Chip Erase cycle to finish.
3.  Load Command No Operation.
Table 28-14.  High-voltage Reset Characteristics
Supply Voltage
RESET Pin High-voltage Threshold
Minimum High-voltage Period for
Latching Prog_enable
V
CC
V
HVRST
t
HVRST
4.5V
11.5V
100 ns
5.5V
11.5V
100 ns
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